◎ 單相雙路可控硅移相觸發(fā)器模塊 (SCR-JKK/2)
SINGLE PHASE DUAL CHANNEL THYRISTOR PHASE-SHIFT TRIGGER MODULE (SCR-JKK/2)
◆ 單相雙路可控硅移相觸發(fā)器模塊 (SCR-JKK/2) 的原理是在前述的 SCR-JKK 基礎(chǔ)上增加一路負(fù)半周的可控硅觸發(fā)信號(hào) , 以實(shí)現(xiàn)單相電路中對(duì)兩只單相可控硅的正負(fù)半周同時(shí)移相調(diào)節(jié) , 除此以外均同 SCR-JKK。
◆ SCR-JKK/2按控制信號(hào)的不同, 分以下規(guī)格(型號(hào)表):
◆ The principle of the single phase dual channel thyristor phase-shift trigger module (SCR-JKK/2) is: On the basis of SCR-JKK, add one thyristor trigger signal of the negative half period to achieve the simultaneous phase-shift adjustment of the positive and negative half periods of two single phase thyristors in the single phase circuit. Except for it, the parameters and performance of SCR- JKK/2 are the same as SCR-JKK.
◆ According to different control signals, SCR- JKK/2 can be divided into four types: E, F, G, and H types. The following is the specification model table.
◎ 控制電壓 U CON 與可控硅輸出導(dǎo)通角 α 關(guān)系曲線 ( 阻性負(fù)載 ) 及波形圖
The relationship and waveform of the control voltage U CON and the conduction angle α of the thyristor (when resistive load)
◎ 外形尺寸 Overall dimensions
◎ 注意事項(xiàng)及改進(jìn)說(shuō)明
Precautions and improvements
◆ 請(qǐng) 用 戶 特 別 注 意 : TRIAC-JKK, SCR-JKK 和SCR-JKK/2 這三類模塊為強(qiáng)電觸發(fā)方式可控硅 ( 而不是通常脈沖變壓器觸發(fā)可控硅的門極和陽(yáng)極 ), 所以在可控硅門極損壞而不能被觸發(fā)導(dǎo)通的情況下 , 如觸發(fā)器模
塊仍有控制電壓 , 則電網(wǎng)的電流從 A 端進(jìn)入 , 從 G 端再到負(fù)載 , 而電網(wǎng)電壓的極大部分則降在 A, G 兩端 , 這個(gè)電壓電流所產(chǎn)生的發(fā)熱 , 在數(shù)秒中內(nèi)將使 A, G 兩端內(nèi)部器件燒毀 . 這種由于可控硅門極損壞而導(dǎo)致觸發(fā)器模塊損壞的情況 , 是這三個(gè)器件最主要的不足。
◆ 改進(jìn)說(shuō)明 : ”移相觸發(fā)器模塊系列”中 , 為提高調(diào)壓系統(tǒng) ( 由移相觸發(fā)器模塊 , 可控硅及同步變壓器組成的 )的靜態(tài) dv/dt 指標(biāo) , 使系統(tǒng)在合閘上電時(shí)不致瞬間導(dǎo)通一下 , 圖 B-1/ 圖 B-2 以及圖 C-1/ 圖 C-2 可改進(jìn)為如下 : 移相觸發(fā)器模塊的 A 極接到對(duì)應(yīng)的 RC 吸收回路的中點(diǎn) , R,C 的接法必須為圖上的位置 ( 即 R 的一端接單相可控硅的陽(yáng)極或雙向可控硅的主電極 T1, C 的一端接單相可控硅的陰極或雙向可控硅的主電極 T2), R 和 C的位置不能交換 . 其中 R 選 15Ω~30Ω, 功率大于等于3W; C選0.1μf~0.47μf, 250VAC或400VAC以上。
◆ SPECIAL ATTENTION: TRIAC-JKK, SCR-JKK and SCR-JKK/2 these three types modules adopt strong electric trigger mode, so when the module cannot be triggered to conduction due to the damage of the thyristor gate, if there still remains voltage on the trigger module, the current of the power grid will enter from the A port and then pass through the G port to the load, and the vast majority of the power grid voltage will be applied to both ends of A and G, after that there will be huge heat generated caused by the high voltage and current, which will burn and damage internal components connected to the both ends of A and G in few seconds. It is the main deficiency of these three kinds of module s that the trigger module will be damaged caused by the damage of the gate of the thyristor.
◆ IMPROVEMENT DESCRIPTIONS: For these phase-shift trigger module series, in order to improve the static dv/dt of the voltage regulation system (consisting of the phase-shift trigger module, the thyristor and the synchronous transformer) and also prevent the voltage regulation system from the transient conduction once when the system is switched and powered on, the improvements of Figure B-1/B-2 and Figure C-1/C-2 as follows: The A port of the phase-shift trigger module should be connected to the midpoint of the corresponding RC snubber loop, and the connection method of R and C must be as shown in the figure (that is, one end of R should be connected to the anode of the single- phase thyristor or the main electrode T1 of the TRIAC, and one end of the C should be connected to the cathode of the single phase thyristor or the main electrode T2 of the TRIAC), and the positions of R and C cannot be exchanged. The resistance of the RC circuit is generally 15~30Ω, 3W or more, and the capacitance is 0.1~0.47μf, 250VAC/400VAC or more.point of the corresponding RC absorption circuit, R, C, the location of the connection must be on the drawing (i.e. R pick up at the end of the single phase SCR anode or bidirectional thyristor T1, the main electrode C pick up at the end of the single phase SCR cathode or two-way thyristor main electrode T2), the location of the R, C can't exchange. Which R selected 15 Ω - 30 Ω, power is greater than or equal to 3 w; C choose 0.1uf- 0.47uf,250VAC or 400VAC.
